Semiconductor metrology solution
Contactless temperature measurement of silicon wafer
Technology at a glance
Specifications
•Broad spectral range: 1.0-2.0 𝝻m.
•Tunable high repetitio rate: 20-80 kHz.
•Nanosecond pulse duration: ~60 ns.
•High average power: >2 W.
•High output stability: ~1 % noise (within 15 Hz)
Architecture
•All fiber architecture.
•Telecom fiber laser cost-effective solution.
•Passive Q-switching operation.
•Nonlinearity-driven spectral shaping capability.
Non-contact temperature measurement of in-process silicon wafer
- 1 °C measurement accuracy
- Large measurement rage up to 600 °C.
- Fast acquisition speed (~ms)
Additional applications
Biomedical imaging
Tunable source
Application space
Research outputs
